Properties of Piezoelectric Pzt Thin Films for Microactuator Applications
نویسندگان
چکیده
منابع مشابه
Properties of piezoelectric PZT thin films for microactuator applications
The piezoelectric properties of lead zirconate titanate (PZT) thin films deposited on thick silicon substrates and thin silicon membranes were investigated using optical interferometry. The effect of the geometrical constraints and clamping effects on the piezoelectric response is discussed. The study of the dielectric permittivity and the loss as a function of the amplitude of the alternating ...
متن کاملarchitecture and engineering of nanoscale sculptured thin films and determination of their properties
چکیده ندارد.
15 صفحه اولEffect of Annealing on Physical Properties of Cu2ZnSnS4 (CZTS) Thin Films for Solar Cell Applications
Cu2ZnSnS4 (CZTS) thin films were prepared by directly sputteringCu (In,Ga)Se2 quaternary target consisting of (Cu: 25%, Zn: 12.5%, Sn; 12.5%and S: 50%). The composition and structure of CZTS layers have beeninvestigated after annealing at 200 0C, 350 0C and 500 0C under vacuum. Theresults show that recrystallization of the CZTS thin film occurs and increasingthe grain size with a preferred orie...
متن کاملCharacterization of PZT thin films for micromotors
Piezoelectric membranes consisting of sputter deposited PbZrxTi1−xO3 (PZT) films on silicon diaphragms have been investigated for their resonance and piezoelectrical properties, in view of their application as stator of a micromotor. The behavior of resonance frequencies was studied as a function of membrane thickness and dc-bias, in order to derive the total stress in the films and the piezoel...
متن کاملInvestigation the dielectrical and electromechanical properties of PZT thin films
We have studied thedielectric and electromechanical properties of pure and doped Pb(Zr0.53Ti0.47)O3thin films.Samples were prepared bya sol-gel method and werecalcined at temperatures of 700oC for two hours in a Pb-rich atmosphere.It was observed a negligible effect occurs during the tetragonal–rhombohedral transition in the preparedpure and doped PZT thin films.The optimal amount of electrical...
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ژورنال
عنوان ژورنال: MRS Proceedings
سال: 1994
ISSN: 0272-9172,1946-4274
DOI: 10.1557/proc-360-429